发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To enhance resolution, heat resistances, etc., by exposing electron beams to a resist material contg. the mixture of an alkali-soluble polymer or copolymer, and a vinyl type copolymer represented by a specified general formula. CONSTITUTION:The resist soln. is prepared by dissolving, in a solvent, such as ethyl cellosolve, a mixture of the alkali-soluble polymer or copolymer, and a vinyl type copolymer represented by formula I or II (in which R2, R4 are H, lower alkyl, an aromatic or heterocyclic group, and at least one of them is an aromatic or heterocyclic group). A sharp positive type resist pattern corresponding to a desired pattern is obtained by coating a substrate with this resist soln. to form a resist film, exposing it to electron beams in the desired pattern, and developing it with an alkali developing soln.
申请公布号 JPS60254130(A) 申请公布日期 1985.12.14
申请号 JP19840109495 申请日期 1984.05.31
申请人 FUJITSU KK 发明人 AKIMOTO SEIJI
分类号 G03C1/72;G03C5/00;G03F7/004;G03F7/039;G03F7/20;G03F7/26;H01L21/027 主分类号 G03C1/72
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