| 摘要 |
PURPOSE:To enable to form the pattern of a substrate having a large area even when deformation of the substrate is generated a little, and to contrive to enhance mass productivity of thin films by a method wherein a pattern for formation of the film is drawn by performing projection type transfer using light to pass through a mask, and wave length of light to pass through the mask is changed by every pattern of laminating film. CONSTITUTION:The numeral 11 in the figure is a gate electrode, 12 is a gate insulating film, 13 is a semiconductor thin film, and 14 and 15 are a source and a drain respectively, and a thin film of four layers is formed on a sample substrate 4. A black filter 19 selects a transmitting region of short-wavelength light radiated from a short-wavelength mercury lamp device 1. An optical system 2 to lead to the sample draws a pattern directly to the sample as a projection type. To manufacture an amorphous silicon thin film transistor, the gate electrode 11 is deposited using a red filter as a color filter 17 at first, and after the gate insulating film 12 is deposited according to whole exposure, the semiconductor thin film 13 is laminated using a green color filter 17, and then the source and drain electrodes 14, 15 are laminated using a blue color filter 17 to complete the transistor. |
