| 摘要 |
PURPOSE:To improve photosensitivity by laminating amorphous silicon, into which a specific quantity of boron, phosphorus or arsenic is each mixed, or non- doped amorphous silicon onto both the upper and lower surfaces of a P type or N type semiconductor and forming three-layer structure. CONSTITUTION:Structure wherein amorphous silicon, into which not more than 0.005 atomicity percent boron is mixed, or amorphous silicon, into which not more than 0.01 atomicity percent phosphorus or arsenic is mixed, or non-doped amorphous silicon 51, a P type or N type semiconductor 52 and amorphous silicon, into which not more than 0.005 atomicity percent boron is mixed, or amorphous silicon, into which not more than 0.01 atomicity percent phosphorus or arsenic is mixed, or non-doped amorphous silicon 53 are laminated in three layers is shaped. Accordingly, a solid-state image pickup element, optical response speed thereof is fast and which has large photocurrents, is obtained. |
