| 摘要 |
PURPOSE:To increase the speed of operation of an element by keeping contact resistance in a buried contact section, in which an impurity region in the element and a wiring are connected, low in a semiconductor device in which a single crystal thin semiconductor layer is formed onto an insulating layer as an SOI, an SOS, etc. and the element is shaped to the semiconductor layer. CONSTITUTION:A semiconductor pattern 32 as an insular element region is formed onto an insulating layer 31. An oxide film 33 is grown on the whole surface through oxidation, the oxide film 33 is etched selectively while using a resist pattern 34, to which a buried contact prearranged section is bored, as a mask on the oxide film 33 on an element region and a buried contact section 35 is shaped, and silicon films 36, 36' are evaporated onto the whole surface under the state in which the resist pattern is left. The resist pattern 34 is removed, and the silicon film 36 section on the resist pattern is lifted off to leave the silicon film 36' only to the buried contact section 35. A polycrystalline silicon film 37 containing an n type impurity is deposited on the whole surface. The n type impurity is diffused through the residual polycrystalline silicon film 36 from a wiring 39 containing the n type impurity through heat treatment. |
