摘要 |
PURPOSE:To form an immobilized enzyme film on a hydrogen ion sensitive film to a uniform thickness by providing a photosetting resin layer contg. the enzyme to be immobilized to a field effect type transistor having the hydrogen ion sensitive film and irradiating light to the resin layer. CONSTITUTION:An enzyme soln. prepd. by dissolving glucose oxidase in the aq. soln. of a photosetting resin is coated on the hydrogen ion sensitive film 1 of the field effect type transistor having a source electrode 2, a drain electrode 3 and the film 1 and light is irradiated to the film 1. Said film is developed by water and is dried after irradiation of the light to form a glucose oxidase immobilized film 7. Lead wires 4 are thereafter connected thereto and the electrode 2, the electrode 3, the wires 4 and the rear of the element are insulated with a covering 8. |