| 摘要 |
<p>PURPOSE:To allow the semiconductor storage device to operate invariably at a low voltage by providing a control signal terminal coupled with a floating gate through a capacitor, and conbining a high and a low potentials to be applied to a control gate and the control signal terminal, respectively. CONSTITUTION:A capacitor C1' is formed between the control gate 4 and floating gate 5 and capacitors C2' and C3' are formed between the gate 5 and a substrate 1 parasitically. Further, one terminal of a capacitor CA is coupled with the gate 5 and the control terminal 7 is provided to the other terminal of this capacitor CA. The same high voltage is applied to the terminal 7 and gate 4 in this constitution during data writing operation. When data is erased, the terminal 7 is set to zero. In this case, the terminal 7 may be applied with the high voltag while the gate 4 is set to zero. Consequently, data is written and erased without any high voltage.</p> |
