| 摘要 |
PURPOSE:To provide an excellent removing capacity for any metal and to reduce adherence of fine particles by treating a semiconductor substrate in treating solution containing hydrofluoric acid, hydrogen peroxide and pure water. CONSTITUTION:For the purpose of removing an organic matter of a semiconductor substrate, it is H2SO4/H2O2, NH4OH/H2O2/H2O, HCl/H2O2/H2O-treated, UV/ozone-treated O2 plasma-treated, and further metal impurities are removed together with a spontaneous oxide film by hydrofluoric acid/H2O2/pure water process. In this case, HF concentration is set to 0.1 to 10 wt.$ and H2O2 concentration i set to 0.1 to 15 wt.%.
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