| 摘要 |
PURPOSE:To reduce unevenness and magnitude of conversion difference when etching an opening to be formed through an insulating film, and to simplify the design as well as to make the pattern fine by causing partial impurity-concentration difference in the insulating film made of silicon oxide on a semiconductor substrate. CONSTITUTION:After a pattern of photo resist 14 is formed on the insulating film 13 made of silicon oxide, etc. which is formed over the semiconductor substrate 11 made of silicon, etc., the insulating film 13a requiring etching is ion- implanted to introduce impurities using this photo resist pattern, so that the etching rate of the insulating film 13a can become faster in comparison with the case where impurities are not introduced. In this way, the etching time can be made short and the conversion difference owing to over-etching can be decreased. Moreover, since the etching rate of the insulating film 13a depends on the kind and concentration of the impurities, controlling of the conversion difference is made possible thereby. |
