| 摘要 |
PURPOSE:To simultaneously form narrow and wide separations in a self-aligning manner with the surface in a flat state by selectively etching by thin fluid organic film by the simply step of masking only once. CONSTITUTION:Separating grooves 2, 3 are formed on a p type silicon substrate 1, and a NSG film 4 is accumulated. A silicon nitride thin film 8 is accumulated, and quinone diad resist 6 having fluidity is coated. When the resist film 6 is etched and finished in the state that silicon nitride film 8 is exposed, resist films 6B, 6C remain on the separated portions 2A, 3A. The film 8 is etched with the films 6B, 6C as masks, and removed. The film 4 is etched and selectively removed. The film 8A and the resist 6B are lifted off on the narrow separated portion 2A. The films 8B and 6C on the wide separated portion 3A are removed so that the surface of the substrate 1 becomes completely flat. |
