| 摘要 |
PURPOSE:To contrive the improvement in characteristics by a method wherein a reverse conductivity type layer is formed on the back having a work strain layer of an Si substrate of one conductivity type, and the junction end is covered with an insulation film; then, a thin layer of one conductivity type is formed on the surface mirror-finished, and voltage is impressed across layers of both surfaces; further, radiation is made incident to the thin layer of the front. CONSTITUTION:A surface 1b having work strain of the n type Si substrate 1 is provided with a P<+> layer 2, and the junction end 3a is covered with an SiO2 film 4. Formation of an N<+> layer 10 on the mirror-finished surface 1a facilitates lamination. The power source 5 is connected to the P<+> layer 2 and the N<+> layer 10, and a radiation-sensitive layer is formed by spreading a depletion layer 6 from the junction 3 to the N<+> layer 10, thus making said layer 10 as the incidence part. The layer 10 serves to control the spreading of the depletion layer and to reduce the contact resistance, causing little electric field at the interface between the substrate 1. This construction enables marked lamination of the non-sensitive layer 10. In addition to excellent characteristics originally belonging to the titled device of junction type, the characteristics of high sensitivity and high energy resolution can be exhibited. |
