| 摘要 |
A process for producing silicon-containing deposit films which comprises introducing a cyclic silane represented by the general formula (SiH2)n, wherein n is 4, 5, or 6, in the gaseous state together with a carrier gas into a deposition chamber and applying heat to the introduced gases at ordinary pressure to decompose the cyclic silane and form a silicon-containing deposit film on a substrate placed in the deposition chamber.
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