发明名称 MANUFACTURE OF SINGLE CRYSTAL
摘要 PURPOSE:To grow high-quality single crystal excellent in crystallizability and uniformity of the composition by passing slowly a crucible holding the melt contained raw material through the inside of a furnance having temp. gradient while rotating the crucible acceleratedly and deceleratedly. CONSTITUTION:A crucible (made of platinium) 1 incorporated with raw material is decended through the inside of a furnace 2 in which the temp. gradient typically showed at the right side of the figure is formed with a heating heater and the raw material incorporated in the crucible 1 is competely melted to make melt 3 and the melt 3 is stitted and made uniform composition through rotating the crucible 1 acceleratedly and deceleratedly in the X direction shown by an arrow. Then, at the point of time at which the lower end of the crucible 1 is reached the point A being crystallizing temp., the melt 3 is cooled below the crystallizing temp. to grow single crystal 4. The decending of the crucible 1 is continued and it is slowly cooled to obtain rod-shaped high-quality single crystal 4.
申请公布号 JPS60231491(A) 申请公布日期 1985.11.18
申请号 JP19840087402 申请日期 1984.04.28
申请人 SONY KK 发明人 SUGAI TOORU;ITABASHI SETSUO;YORIZUMI MINEO
分类号 C30B11/00 主分类号 C30B11/00
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