| 摘要 |
PURPOSE:To achieve high degree of integration, by providing an emitter region and a collector region, which form hetero-junction, on both sides of a base region, on a semi-insulating substrate. CONSTITUTION:On a semi-insulating GaAs substrate 11, a p<+> type GaAs base region 12 is formed. A base electrode 12E is formed on the region 12. On both sides of the base region 12, an n type AlGaAs emitter layer 13 and an n type AlGaAs collector layer 14 are formed, and a double hetero-junction is formed. An emitter contact layer 15 and a collector contact layer 16 comprising n<+> type GaAs are formed on the layers 13 and 14. An emitter electrode 13E and a collector electrode 14E are formed on the contact layers. Element isolating bands 17 are provided. This device has the same structure as an SOI structure. Difference in height can be made small and wiring becomes easy. Higher density is also achieved. |
