| 摘要 |
PURPOSE:To lower the concentration of dangerous gas flowing into a vacuum pump for gas exhaust, by providing a gas reaction mechanism additionally between a reaction unit and the pump in a reduced-pressure type vapor growth apparatus having a gas introduction port, the reaction unit for holding a semiconductor substrate, and the vacuum pump. CONSTITUTION:A heater 4 for heating a reaction unit is wound round on the outer periphery of the semiconductor substrate holding reaction unit 2 of a vapor growth apparatus provided with an SiH4 gas introduction port at one end, and a reaction is generated in the reaction unit 2 so as to deposit a growth layer on the surface of the substrate held therein. Thereafter a waste gas is exhausted from an exhaust port on the side opposite to an introduction port 1. In this construction, another reaction unit 3 for treating a residual gas surrounded by a heater 4 for heating a reaction gas, likewise, is connected additionally to the exhaust port. The reaction gas produced is sucked by a vacuum pump 5 for exhausting the gas, mixed thereafter with an N2 gas for dilution introduced from an N2 gas inlet, and is exhausted from an exhaust port 7. The concentration of a dangerous gas in the exhaust gas is lowered in this way, and thus the apparatus is made suitable for large-diameter substrates. |
