| 摘要 |
PURPOSE:To form ohmic contact of high reliability by a method wherein the oxide film of a contact regions is removed by irradiation with light in an active gas, and a metallic compound is irradiated with light and thus coated with a metal. CONSTITUTION:A semiconductor substrate 11 is placed in a vacuum container. The container is evacuated and the gas of CH3Br is introduced. A contact hole 16 is formed by etching after irradiation with laser beams 15 via mask 14. Thereafter, when the degree of vacuum is increased by continuing irradiation and the Al2(CH3)6 gas is introduced, the adhesion of Al starts in the contact hole 16. Then, the irradiation is stopped at the point of a required film thickness. |
