| 摘要 |
PURPOSE:To protect a metallic film gate electrode or wiring from the corrosion with chemicals or from the oxidation during heat treatment by a method wherein a high-melting-point metal silicide film or a polycrystalline Si film is formed on the surfaces of the metallic film gate electrode and wiring made of high melting point metal and on their side surfaces. CONSTITUTION:After a gate oxide film 2 and the metallic film 3 are formed on a substrate 1, the metal silicide film 7 relatively thin made of high melting point metal is formed. Next, the metallic gate electrode 3a is formed by patterning the films 7 and 3; thereafter, an impurity is introduced to the neighborhood of the surface of the substrate 1 by ion implantation or the like. Then, a metal silicide film 8 of high melting point metal is formed over the whole surface. A frame of metal silicide films 8a and 8b is formed on the side surface of the metallic gate electrode 3a. Successively, an impurity diffused layer 4 is formed by heat treatment. An insulation film 5 of Si oxide film or the like is formed, and metal wiring 6 is carried out. |
