发明名称 FORMATION OF ELECTRODE IN SEMICONDUCTOR INTEGRATED CIRCUIT SUBSTRATE
摘要 PURPOSE:To obtain an electrode having high connecting reliability, by forming a thin metal film as a protecting layer for preventing oxidation, on a metal film, which is a main body of solder wetting connection, and performing mutual diffusion by heat treatment. CONSTITUTION:On a substrate 10, the following parts are sequentially formed by evaporation by an electron beam and the like or sputtering: a Cr layer 20 of the first metal film, which is bonded to the substrate 10; a Cu layer 30 of the second metal film, which is a main body of solder wetting connection; and an Au layer 40 of the third metal film as a protecting film for preventing surface oxidation of the second metal film. Heat treatment is performed, and a mixed layer 50 is formed. An electrode pattern is formed by etching. When a flip chip is mounted on the substrate by a fused connecting method, the solder wetting property of the substrate electrode is excellently kept. Therefore, occurrence of poor connection can be reduced.
申请公布号 JPS60218872(A) 申请公布日期 1985.11.01
申请号 JP19840074949 申请日期 1984.04.16
申请人 HITACHI SEISAKUSHO KK 发明人 MURATA AKIRA;OOSHIMA MUNEO;SAKAGUCHI MASARU;SATOU RIYOUHEI
分类号 H01L21/28;H01L29/45;(IPC1-7):H01L29/46 主分类号 H01L21/28
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