| 摘要 |
PURPOSE:To form the finest resist pattern by detecting variation in infrared absorption spectrum and controlling the quantity of exposure. CONSTITUTION:Infrared rays from a laser diode 6 are made incident on the exposure processed area of resist 2 as a beam similar to argon laser beam, and light reflected by the surface of a substrate 1 is detected by an infrared detector 9. This reflected light is transmitted through the resist 2 reciprocally twice and when the resist 2 is in a naphthoqninone diazo state, absorption effect appears and attenuation is large. The absorption effect disappears and the output of the detector 9 increases as a change into indene carboxylic acid advances according to optochemical reaction, and the output of the detector 9 becomes constant when the reaction ends. Consequently, the extent or speed of the advance of chemical reaction of the resist by energy beam irradiation is detected to control the quantity of exposure precisely, thereby developing extremely fine work. |
