| 摘要 |
PURPOSE:To form a conductive film pattern without generating irregularities on a base body by projecting beams through a mask arranged just above a conductive film brought into contact with an oxygen atmosphere, accelerating oxygen ions generated and striking the ions against the conductive film. CONSTITUTION:A mask 5 is opposed to a position just above a silicon substrate 1, and a negative plate 6, a center thereof has an opening section, is arranged to the upper section of the mask 5. The inside of a reaction chamber 2 is evacuated by a vacuum pump 7, oxygen gas, a flow rate thereof is controlled through a mass flowmeter 9 from an oxygen bomb 8, introduced, and SOR beams 10 are prjected through the mask 5 by a lens 11. Consequently, oxygen just above the substrate 1 is ionized, and accelerated by a DC bias applied to a positive plate 3 and the negative plate 6 by a DC power supply 12 and driven into an aluminum film on the substrate 1, and the aluminum film is changed completely into an insulating aluminum oxide film. Accordingly, the surface of the silicon substrate 1 is coated with an aluminum conductive film 21 and an alumium oxide insulating film 22 in approximately the same thickness, and the conductive film 21 has a pattern correponding to a light-shielding pattern 51 for the mask. |
