发明名称 FORMING METHOD OF CONDUCTIVE FILM PATTERN
摘要 PURPOSE:To form a conductive film pattern without shaping irregularities on a base body by scanning light-beams to a section in the vicinity of the surface of the base body except an expected conductive film pattern section region under an atmosphere containing oxygen, accelerating oxygen ions generated by electrolysis and striking the ions against a conductive film. CONSTITUTION:The inside of a reaction chamber 2 is evacuated by a vacuum pump 5, and O2 gas is introduced while a flow rate thereof is controlled by a mass flowmeter 7 from an oxygen cylinder 6. When SOR beams 8 are projected by a lens 9 and scanned with the exception of the upper section of a surface region as a pattern for a conductive film, oxygen is ionized just above a substrate 1, and accelerated by a DC bias applied by a power supply 11 to a positive plate 3 and a negative plate 10 surrounding an optical path and struck against an aluminum film on the substrate 1, and the aluminum film is changed completely into an aluminum oxide film while leaving a wiring pattern section. Accordingly, the surface of the silicon substrate 1 is coated with an aluminum conductive film and the aluminum oxide insulating film in approximately the same thickness, thus forming the desired conductive film pattern.
申请公布号 JPS60211848(A) 申请公布日期 1985.10.24
申请号 JP19840067961 申请日期 1984.04.05
申请人 FUJI DENKI SOUGOU KENKYUSHO:KK 发明人 SHIMIZU AKINORI;SAGA MISAO;MATSUZAKI KAZUO
分类号 H01L21/3205;H01L21/28;H01L21/31;H01L21/316 主分类号 H01L21/3205
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