| 摘要 |
PURPOSE:To enable to perform a wire-bonding using Al wires and to save high-priced precious metals, and moreover, to contrive to improve the reliability of the wire-bonding by a method wherein the inner lead part or the inner lead part and the tab part is/are coated with an Al coated layer or an Al alloy coated layer in a thickness of 1-20mum, leaving an coated layer and a Co coated layer or an alloy coated layer of these metallic elements on the periphery/ peripheries of the inner lead part or the inner lead part and the tab part. CONSTITUTION:At least the inner lead part or the inner lead part and the tab part of a substrate for semiconductor lead frame consisting of Cu or a Cu alloy is/are coated with an Ni coated layer and a Co coated layer or an alloy coated layer of these metallic elements in a thickness of 0.1-5.0mum, and the inner lead part or the inner lead part and the tab part is/are coated with an Al coated layer or an Al alloy coated layer in a thickness of 1-20mum, leaving the Ni coated layer and the Cu coated layer or an alloy coated layer of these metallic elements on the periphery/peripheries of the inner lead part or the inner lead part and the tab part. These coating procesures are performed as follows as an example: an Ni coated layer 9 is formed on the periphery of the point part of an inner lead part 2 and an Al coated layer 10 is formed centering around the wire bonding part thereon, leaving the Ni coated layer 9 on the periphery of the wire bonding part. The coating of the Ni coated layer and the Co coated layer or the alloy coated layer of these metallic elements is done by performing an electroplating or a chemical plating, and the coating of the Al coated layer or the Al alloy coated layer has only to do by performing a vacuum evaporation, an ion-implantation, sputtering and so forth. |
