| 摘要 |
PURPOSE:To contrive improvement both in function and high frequency characteristics of the titled field-effect transistor by a method wherein a gate electrode with which a Schottky junction is formed in the first semiconductor layer is provided in a buried form, the first electrode is formed on one surface of the first semiconductor layer, and then the second electrode is formed on the other surface of the first semiconductor layer. CONSTITUTION:A semiconductor layer L4 of n type, consisting of AlxGa1-xAs (0<x<1), for example, having a relatively low specific resistance such as 10<18> atom/cm<2> or above in the density of impurities and also having the bottom of a conduction band which is higher than the semiconductor layer L1 on the side of the semiconductor layer 1, is interposed between semiconductor layers L1 and L2. As a result, the travelling time required for the electron moving across the semiconductor layer l1 is markedly shorter when compared with the case of the conventional Schottky junction type field-effect transistor, and the field-effect transistor having remarkably excellent function and high frequency characteristics can be obtained. |
