| 摘要 |
PURPOSE:To make a storage plane high-density in the word line direction by making it possibel to obtain a S/N ratio equal to that of the two interscetions/bit system and the operation margin of the storage plane near to that of the system above by defining the information storage unit of the ferromagnetic thin film storage unit, which uses sense lines as well as digit lines, as one intersection/bit. CONSTITUTION:A storage plane is formed by making word lines 50 and 51 orthogonal to digit lines 10-17 which are used as sense lines commonly, reference information lines 25 and 26, and balance lines 27 and 28. Two way switches 30-37 are connected to digit lines 10-17 respectively, and selector switches 41-44 are connected to reference information lines 25 and 26 and balance lines 27 and 28 respectively, and these switches are connected to input terminals 100 and 101 of differential sense amplifier 60. Selection of reference information lines and balance lines is controlled by write and read operation modes and write information, and a timing signal which prescribes the closing time of a pertinent selector switch is supplied from selection control circuit 80 to digit selection driving circuit 70, and a prescribed switch in the selector switch group is switched by this circuit 70. |
