| 摘要 |
<p>PURPOSE:To make it possible to monitor chemical reaction or film quality on the surface of a film in a real time during the formation of the film, by using an infrared ray reflecting and absorbing method in a dry film forming process. CONSTITUTION:Infrared rays from a light source 1 are controlled by a rotary polarizer 3 and the surface of the substrate 13 in a plasma CVD apparatus 24 is alternately irradiated with S-polarized light and P-polarized light. Infrared rays reflected from the surface of the substrate 13 reach a detector 6 through a transmitted wavelength variable band pass filter 5. The vibration electric field intensity on the surface of the substrate 13 becomes max. when P-polarized light is incident and almost comes to zero by S-polarized light vertical to said P- polarized light. Becuase the absorption intensity of the molecule present in a gaseous phase is not changed by the rotation of a polarization surface, when the AC signal generated in the detector 6 receives phase detection, only the spectrum of the chemical speed on the surface of the substrate 13 can be measured selectively. It is extremely effective to perform feedback control by utilizing the measured result in order to keep the quality of a film.</p> |
