| 摘要 |
PURPOSE:To perform the stabilization of treating characteristic and prevent the adverse influence of forming amorphous state by constructing to fall the effective area ratio of a cathode electrode to an anode electrode within the specific range, thereby obtaining stable bias voltage. CONSTITUTION:A reaction chamber 1 capable of holding a hermetical seal therein is supported so that a pair of parallel flat plate electrodes 2, 23 are opposed elevationally therein and supported. A susceptor 4 is secured to the electrode 2 of lower side, a silicon wafer W is loaded as a sample thereon, and an RF power source 6 is connected through a matching circuit 5 to the electrode 2. The electrode 3 of upside is connected together with the chamber 1 with an earth, with the result that the electrode 2 of lower side is used as a cathode electrode and the electrode 3 of upper side is used as an anode electrode. Further, the area of the cathode electrode (lower side electrode) 2 is increased larger than that of the anode electrode (upper side electrode), and set so that the ratio of the areas become the value of the range of 1-2. In this case, part of the inner surface of the chamber 1 may be performed as the function of the anode electrode, and the area of the anode electrode employs the effective area including these areas. |
