| 摘要 |
PURPOSE:To form a high-purity diamond thin film on a substrate, by sputtering a target made of pressed powdery diamond in a vacuum chamber with a beam of high-speed atom having large mass number. CONSTITUTION:The gaseous atom having a mass number of >=60, e.g. Xe, Kr, Hg, etc. is introduced through the gas inlet 4 into the vacuum chamber 2 connected with the vacuum pump 1, and is converted to a high-speed atomic beam having a kinetic energy of about 3 KeV by the high-energy beam source for the bombardment of the target, and the target 5 formed by pressing powdery diamond is bombarded with the high-energy beam. The unit lattice C5 of diamond having a mass number of 60 is sputtered, and the sputtered carbon molecules are deposited on the substrate 6. A high-purity diamond thin film can be formed on the substrate 6 by this process. |
