| 摘要 |
PURPOSE:To deposit a thin film having a desired width on a substrate by a laser CVD method by using a gaseous mixture composed of H2 and N2 for the carrier gas of an alkyl compd. and changing the mixing ratio of the gaseous mixture to change the decomposition temp. of the alkyl compd. CONSTITUTION:Laser light 12 is irradiated through a window 22 to the deposition part 13 on a substrate 11 on the surface of which the patterns of Si 20 and SiO2 21 intermingle to heat the substrate. The Al(CH3)3 transported by the gaseous mixture composed of gaseous H2 14 and gaseous N2 15 is decomposed and Al is deposited on the substrate 11. The substrate 11 and a cell 16 for deposition are slid on a stage 18 by a motor 19 so that the Al is deposited straightly. The mixing ratio is set at about H2:N2=1:1 and the total flow rate at about 700cc/min in the case of deposition on the Si 20 and the mixing ratio is set at H2:N2=1:9 in the case of deposition on the SiO2 21. The straight and uniform deposition of the Al at about 3mu width is thus made possible with substantially no change in the line width of the Al at the boundary line between the Si 20 and the SiO2 21 by changing the mixing ratio on the Si 20 and the SiO2 21 in the above-mentioned manner. |
