| 摘要 |
PURPOSE:To enable to form a very fine pattern on a semiconductor substrate with excellent reproducibility by a method wherein a pattern is formed on an organic film, and after film has been formed using a substance with which final pattern will be formed, the organic film and the films formed thereon are removed by performing a lift-off method. CONSTITUTION:An organic film 2 to be used for performance of a lift-off method is formed on a semiconductor substrate 1 and the first film 3, with which adhesive property will be improved and the ions of an ion beam will be absorbed and the ions reaching the organic film will be prevented, is formed on the organic film 2. On the film 3, the second film 4 to be turned into a mask is formed, a mask pattern is formed by performing an etching on the film 4 using a converged ion beam, and after an etching has been performed on the first film 3 using the film 4 whereon said pattern is formed, another etching is performed on the organic film 2 using the first and the second films 3 and 4 whereon said patterns are formed. On the surface having the above-mentioned condition, the third film 6 consisting of the substance with which final pattern will be formed is formed and, lastly, the organic film 2 and the films 3, 4 and 6 are removed by performing a lift-off method. |
