| 摘要 |
PURPOSE:To enable the memory cell of large capacitance and little alpha ray disturbance by a method wherein the side wall of a groove dug in an Si substrate is used as the electrode surface of a capacitor and the region to accumulate signal charges as the inside of the groove. CONSTITUTION:A low-resistant layer is provided in a region including the principal part of the side wall of the groove 17 dug in the Si substrate 10, which layer is made as the plate 8, and the electrode buried in this groove as the capacitor electrode 20. The electrode 20 buried in the groove and the switching transistor section are made of the same Si layer: one of N<+> layers of the switching transistors is made as the capacitor electrode 20, and the other as a diffused layer 15 connected to a bit line 3. Further, an Si layer 101 of the region under the channel part, i.e. gate electrode of the switching transistor is in direct contact with the Si substrate 10 in the lower side. |
