| 摘要 |
PURPOSE:To obtain the titled device which has the function of selection of the polarization plane and can oscillate one of TE waves or TM waves selectively on the mode of a piece of oscillation axis by a method wherein this device has a required thin quantum well layer in proximity to a grating of the distributed reflection region and the electrodes on the active region and the distributed reflection region are isolated from each other. CONSTITUTION:Semiconductor layers 13 and 110 made of non-doped InGaAsP are formed as an active layer 13 of 0.1mum thickness on the surface 111 of an N type substrate 11 where the grating 19 has not been formed, and as a quantum well layer 110 of 100Angstrom thickness on a photo guide layer 12, respectively. Two electrodes 16 and 17 thereof are isolated by a groove 18 more deeply than a contact layer 15 between the active region 111 and the distributed reflection region 112, and currents I1 and I2 can be separately injected to the regions 111 and 112, respectively. With this distributed reflection type single-axial mode semiconductor laser, the current I1 let flow in the region 111 acts as the excitation current contributed to laser oscillation, accordingly, TE waves and TM waves can be oscillated respectively on single axial modes in the neighborhood of Bragg wavelengths. |
