| 摘要 |
PURPOSE:To relieve the load of a metal wiring layer on a substrate, and to reduce the probability level of generation of trouble according to a step difference part by a method wherein a wiring pattern according to a semiconductor is formed in the semiconductor substrate using the semiinsulating semiconductor substrate. CONSTITUTION:Silicon ions are implanted on a semiinsulating GaAs substrate 21, and activating heat treatment is performed to form a wiring pattern 23. A nondoped I-type GaAs layer 24 is grown according to the organic metal thermal decomposition vapor phase growth method. Silicon ions are implanted to form the channel region 25 of an MESFET and a connecting region 26 to the wiring pattern 23. A gate electrode 28 is provided using a high melting point heat resistant material such as tungsten silicide, etc., and ion implantation and activating heat treatment are performed to form a source region 29 and a drain region 30. The necessary surface part is covered with an insulatingly protective film 31, and a drain electrode 32 and a wiring 33 are formed of metal wiring layers. |
