| 摘要 |
PURPOSE:To improve a step coverage as well as to intensify the electromigration-resisting property of the titled semiconductor device by a method wherein a wiring with which a semiconductor element will be connected is formed into a three-layer structure using a polycrystalline Si, a metal of high melting point and Al or Al-Si. CONSTITUTION:The wiring, consisting of Al 5, a metal of high melting point 10 and polycrystalline Si 9, is connected to the diffusion layer 8 of a semiconductor substrate 7 through the contact hole of an insulating layer 6. According to this wiring structure, polycrystalline Si is accumulated by performing a chemical vapor-deposition (CVD) method after a contact hole has been formed on the layer 6. The contact hole can be microscopically formed on the polycrystalline Si accumulated by CVD, a step coverage is excellent, and almost no disconnection of wire is generated. Also, the metal 10 has an intensified electromigration- resisting property, the wiring pattern is microscopically formed, and the electromigration generating when an LSI is in operation even when the area of cross section is reduced can be prevented. |
