| 摘要 |
PURPOSE:To obtain an epitaxial layer having few impurities and high purity by introducing a trichloride compound of AsCl3 or PCl3 into a growth atmosphere and generating HCl gas having high purity in a multidimensional mixed crystal III-V group compound semiconductor containing As or P. CONSTITUTION:A reaction furnace is partitioned into two upper and lower raw-material supply chambers 1 and 2 by a gas introducing pipe 4 extending up to its midway, and metallic Ga 7 is housed in the supply chamber 1 and metallic In 8 in the supply chamber 2. HCl gas 9 is fed into the supply chamber 1 by using an introducing pipe 3, and HCl gas 9 is also fed similarly into the supply chamber 2 through an introducing pipe 3. A gas such as AsH3 is fed in from an introducing pipe 4, AsCl gas is generated at the nose of the pipe 4, the gas is sprayed against a substrate 6 for growth opposite to the nose of the pipe 4, and a high-purity crystal layer having low impurity concentration of As, etc. is grown on the surface of the substrate. |
