| 摘要 |
PURPOSE:To enable to enhance the integration and the performance of a semiconductor memory device by a method wherein first grooves are formed in the memory capacitor region of the substrate by performing an etching on the substrate using specified masks and after the first grooves were respectively filled with an electrode material through an insulating film, a second groove is formed by performing an etching on a part of the substrate, where is used as an element isolation region, and an insulating material is embedded therein. CONSTITUTION:A first mask 24 is formed on a P type silicon substrate 21. Then, a CVD SiO2 film 25, for example, is deposited on the whole surface and the CVD SiO2 film 25 is made to remain on the peripheral parts only of the first mask 24 as second masks 251 and 252 by performing an etching on the whole surface. Photoresists 281 and 282 are formed and first grooves 261 and 262 are formed in the memory capacitor region of the substrate using the photoresists 281 and 282, the second masks 251 and 252 and the first mask 24 as masks. A capacitor insulating film 35 is formed on the respective surface of the grooves 261 and 262 and polycrystalline silicon films 271 and 272 are buried in the grooves 261 and 262. An SiO2 film 29 is formed on each of the polycrystalline films 271 and 272 using a nitriding film 23 as a mask, and following that, the mask layers 23 and 22 are removed in order. Then, a second groove part 30 is formed using the second masking materials 251 and 252 and the SiO2 films 29 as masks. |
