MANUFACTURE OF SINGLE CRYSTAL SEMICONDUCTOR DEVICE

摘要

PURPOSE:To enable surely forming seed crystal by making a specific temperature gradient in an irradiated region in the case of forming the seed crystal linearly irradiating an energy beam. CONSTITUTION:On a substrate 102, a polycrystalline or amorphous layer 104 is formed and an energy beam is irradiated linearly on the layer 104. A region 106 linearly irradiated with the energy beam of the layer 104 is once melted and a temperature distribution from one end toward the other end of the linearly irradiated region 106 of a heating temperature gradient from under the melting point to above the melting point of the layer 104 is formed. The temperature distribution is also varied in accordance with time to move the position where the temperature is made under the melting point from one end toward the other end of the above-mentioned linearly irradiated region 106 and a solidified linear single crystal seed is formed from one end toward the other end of the linear irradiated region 106.