| 摘要 |
PURPOSE:To contrive the improvement in heat dissipation by a method wherein a semiconductor element is sealed in a package made of aluminum nitride ceramics (AlN) at least in the part where a semiconductor element is to be fixed. CONSTITUTION:Oxygen 6wt%-containing AlN powder with an average grain size of 1.7mum is press-molded and sintered by hot press into a cavity 1a and a cap 1b. This cavity 1a (enclosure base body) and the cap 1b constitute the enclosure 1. A conductor pattern 7 is formed in the cavity 1a with Ag-Pd paste (containing Cu2O), and the semiconductor element 2 is fixed thereon with a conductive adhesive 3 filled with high-temperature resistant epoxy series Ag; further, a lead frame 4 is fixed in the cavity 1a with a low melting point glass 5. The electric connection of the element 2 to the lead frame 4 is carried out by means of 30mumphi Au wires 6, and heating supersonic bonding is used for the connection. Finally, the cap 1b and the cavity 1a are sealed with the low melting point glass 5, thus bringing the inside of the enclosure 1 into a hermetic state. |
