发明名称 ELECTRODE FORMING PROCESS OF COMPOUND SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To form an electrode with high reliability by a method wherein a Ti/ Pt evaporated film formed for forming an electrode is heat-treated to form an alloy layer and then further evaporates Ti/Au to form multilayered metallic film. CONSTITUTION:A surface protective insulating film 2 is formed on the surface of a compound semiconductor 1 while photoresist 3 in a specific region on the film 2 is removed by coating, exposing and developing processes and then the insulating film below the removed region 3 is further removed by etching process to expose the surface of semiconductor 1. Firstly after evaporating Ti/Pt 5, a Ti4/ Pt5 film is selectively formed on a specific region by peeling off the photoresist 3. Then Ti, a semiconductor and an alloy layer are formed to obtain electrode ohmic. Later another surface protective insulating film 6 is formed again and another photoresist 7 in a specific region located on the Ti/Pt is removed by coating, exposing and developing processes. Secondly the insulating film 6 is selectively removed to evaporate Ti8/Au9. Finally the photoresist 7 is peeled off to form the bonding pad Ti8/Au9 selectively on the specific region.
申请公布号 JPS60176231(A) 申请公布日期 1985.09.10
申请号 JP19840031715 申请日期 1984.02.22
申请人 NIPPON DENKI KK 发明人 ISHIHARA HISAHIRO
分类号 H01L29/43;H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L29/43
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