| 摘要 |
PURPOSE:To enable the formation of a semiconductor layer with excellent reproducibility and uniformity and with a simple structure and sufficient properties for practical use, by implanting ions into at least a part of polycrystalline silicon formed on the substrate for rendering it amorphous. CONSTITUTION:Poly-Si is adhered by CVD or the like on an amorphous insulation substrate 1 such as a quartz plate or the like consisting of SiO2, and then pattern etched to form a polycrystalline silicon layer 2. Thereafter, ions of Si<+> for example are implanted into at least a part of polycrystalline silicon layer 2 to form an amorphous region 3. This amorphous region 3 is formed only in the central portion of the polycrystalline silicon layer 2, while both sides thereof are left as polycrystalline regions 2a and 2b. The polycrystalline silicon layer 2 thus partially rendered amorphous is heat treated so as to cause the amorphous region 3 to crystal grow in solid phase and to form a solid-phase growth region 4. When said heat treatment is effected at a temperature within the range from 600 deg.C-700 deg.C, approximately cylindrical large crystal grains H are formed throughout the width of the amorphous region, and thus the solid-phase growth region 4 having good reproducibility can be obtained. |
