| 摘要 |
PURPOSE:To realize a simple readout device, which needs no mechanical scanning mechanism, as well as to realize a tightly adhered two-dimensional image sensor, which is superior both in S/N ratio and in photo sensitivity, by a method wherein manuscript information is read out by a photo electric converting film by performing an exposure on the whole surface of the film. CONSTITUTION:An Al film 2 is evaporated on a pyrex substrate 1 and a P type amorphous silicon film 3-1 is made to deposit on the whole surface thereof by a plasma CVD method. The Al film 2 and the P type amorphous silicon film 3-1 are combinedly worked in a stripe type by an ordinary photolithography process. After the pattern was formed, an I type amorphous silicon film 3-2 is made to deposit thereon, and moreover, an N type amorphous layer 3-3 is made to deposit thereon for forming a photoelectric converting film having a P-I-N diode structure. An ITO (In2O3-SnO2) (5%) film is further evaporated on the semiconductor layer as a transparent conductive film 4 by performing an RF sputtering. A photoresist pattern is formed in such a way as to cross with the lower Al strip electrode 2 for forming an upper electrode pattern and an etch processing is simultaneously performed, including the N type amorphous silicon layer 3-3 too, for obtaining a two-dimensional photoelectric converting part.
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