| 摘要 |
PURPOSE:To prevent the oval defect of the crystal growth surface of a group III- Vsemiconductor contg. Ga by using Ga melt from which O2 is discharged by adding Mg as a Ga molecular beam source. CONSTITUTION:Mg is added into Ga melt, and the melt is kept at about 400 deg.C for 5-6hr. The O2 in the Ga melt reacts with the Mg, and Mg oxide is formed. The melt is subsequently kept at about 1,200 deg.C for about 24hr to discharge the Mg oxide to the outside of the Ga melt. A single crystal of a group III-V compd. is grown on a substrate by using said Ga melt as a molecular beam source. The density of the oval defect can be reduced to a value 1/10 times the density in the existing process. |
