发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR MAKING IT
摘要 Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.
申请公布号 GB2153253(A) 申请公布日期 1985.08.21
申请号 GB19850001877 申请日期 1985.01.25
申请人 * SONY CORPORATION 发明人 YOSHINORI * HAYAFUJI;AKASHI * SAWADA;SETSUO * USUI;AKIKAZU * SHIBATA
分类号 C30B13/22;C30B13/34;H01L21/20;H01L21/263;H01L21/324;(IPC1-7):C30B11/00;C30B11/14 主分类号 C30B13/22
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