| 摘要 |
PURPOSE:To prevent contamination during processes, and to reduce mask processes to numbers the same as or fewer than the conventional devices by continuously depositing an amorphous Si film, a gate insulating film and a conductive film for a gate electrode in the same chamber by using plasma CVD, etc. CONSTITUTION:First and second main electrode regions 1, 2 and 11, 12 in a T1 consisting of a metallic film and an n<+> amorphous Si film (a-Si film) and first and second main electrode regions 101, 102 and 111, 112 in a R2 are formed on an insulator substrate 10. a-Si films 3, 103, gate insulating films 4, 104 and conductive films 5, 105 for a gate electrode are deposited, and unnecessary sections are removed. The conductive film 105 for the gate electrode in a thin-film transistor (TFTT2) extends up to a section in the vicinity of the second main electrode 2 in a TFTT1. A metallic film is deposited to form a wiring between the gate electrode 105 in the TFTT2 and the second main electrode region 2 in the TFTT1. |
