| 摘要 |
PURPOSE:To form source-drain regions in a self-alignment manner by an Al gate electrode by executing the introduction of an impurity and activation to the source-drain regions by using plasma. CONSTITUTION:A field oxide film 2 is formed to a field section in an N type Si substrate 1 and a gate oxide film 5 in an element region, a gate electrode 6 consisting of Al is deposited, and the film 5 is left only under the electrode 6 through etching using the electrode 6 as a mask. Shallow boron implanting regions 9 are shaped to sections to which source-drain regions must be formed while using the electrode 6 and the film 2 as masks by exposing the surface of the substrate 1 to plasma containing boron ions. An implanting impurity to the regions is activated at a low temperature by exposing the substrate 1 to Ar gas plasma, thus forming the source-drain regions 41, 42. According to the manufacture, the source-drain regions can be shaped in a self-alignment manner by the Al gate electrode because the treatment of impurity introduction and activation to the regions 41, 42 can be executed at the low temperature. |
