| 摘要 |
PURPOSE:To fill a deposition perfectly in a groove and to obtain a highly integrated semiconductor device of high reliability by growing the deposition in vapor phase reacting gas and an etching gas for the deposition. CONSTITUTION:A silicon substrate 10 is etched to form a groove 15 using masks of an Si3N4 film 12 and an SiO2 film 11 and a channel stopper 16 is formed on the bottom of the groove. SiO2 17 is deposited to fill the groove 15 by vapor phase reaction of N2 carrier gas, SiH4 gas and O2 gas. In this case, HF gas is introduced in a reaction chamber. SiO2 adhered to the aperture of the groove 15 is immediately removed by etching and the aperture is not closed even if the width of the groove 15 is smaller to ensure deposition of SiO2 in the groove 15. The Si3N4 film 12 and the SiO2 film 11 are removed and an MOSIC, LSI with an SiO2 17 insulation layer for separating an element is composed. |
