Method for manufacturing vertical PNP transistor with shallow emitter

摘要

A PNP semiconductor device and a manufacturing method therefore. In the method, a window is formed on the surface of a semiconductor substrate having an N-type base region formed therein. A polycrystalline layer is formed on the base region in the window. The polycrystalline silicon layer is ion implanted under specific predetermined conditions with a P-type doping ion. The P-type doping ion is diffused by an annealing treatment under predetermined conditions into the base region to form a shallow emitter region.