| 摘要 |
PURPOSE:To flatly form a second-layer wiring layer and to prevent from disconnecting by a method wherein a first-layer wiring layer of a large thickness is formed on the surface of a device and after an interlayer insulating layer was formed thereon, the first-layer wiring layer is made to expose by removing the interlayer insulating layer formed thereon and the exposed part of the first-layer wiring layer is removed by performing an etching. CONSTITUTION:A first-layer wiring layer 3 is formed on a silicon substrate 1 through an insulating film 2. At this time, the first-layer wiring layer 3 is formed thicker than the final thickness thereof at a time when an element in this multilayer wiring structure is completed. After this, an interlayer insulating layer 4 is formed on the whole surface. The surface of the interlayer insulating layer 4 is coated with a photo resist film 5. After this, the resist film 5 and the interlayer insulating layer 4 are removed in order by performing an etching and the thickness of the interlayer insulating layer 4 is removed to the thickness of the first-layer wiring layer 3 at a time when the element is completed. The first-layer wiring layer 3 made to expose in the way during the above-mentioned process is performed an etching up to become the final thickness thereof at a time when the element is completed with carbon tetrachloride, etc. After this, an insulant of the same kind as the interlayer insulating layer 4 is deposited on the interlayer insulating layer 4, and lastly, a second-layer wiring layer 6 is formed. |
