| 摘要 |
PURPOSE:To obtain the constant voltage of high accuracy by making use of a fact that an energy gap of silicon has an extremely small level of dependence on the production and ambient temperature conditions. CONSTITUTION:The same conduction type impurity is used to both a substrate and a conduction layer forming a gate, and the drain and the gate of a MISFETQ1 having a smaller work function are connected to each other. Then the power supply voltage is supplied via a load resistance R1. While a substrate and a conduction layer forming a gate are formed by the impurities of opposite conduction types to each other. Thus the gate of a MISFETQ2 of a larger work function is used in common with the gate of the MISFETQ1. Then the source of the FETQ1 is connected to the drain of the FETQ2. At the same time, a load resistance R2 is provided to the drain with the source grounded to apply the reference voltage. |
