摘要 |
PURPOSE:To improve the information writing efficiency by providing a specified antireflection layer between the substrate on the writing side and a magnetic recording layer in a titled photoelectromagnetic recording medium using a quaternary amorphous alloy thin film of Gd, Tb, Fe, and Co. CONSTITUTION:A silicon monoxide film 2a as the first layer and a zirconium dioxide film 2b as the second layer which is a high-refractive index single- layered film are provided on a plastic substrate 1 of glass or plastic from the writing side. A quaternary amorphous magnetic recording layer 3 of Gd, Tb, Fe, and Co is formed, and a protective film 4 consisting of a silicon monoxide film is formed and stuck to the glass substrate or the plastic substrate 1b by an adhesive layer 5. The film thickness of the antireflection layers 2a and 2b is optically set to a value 1/2 times the wavelength to be used, and the film thickness of the layer 2b is optically set to a value <=1/4 times the wavelength in consideration of the phase lag in reflection at the interface with the magnetic layer 3. |