发明名称 TESTING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a testing method of quantitative electrostatic breakdown strength coincided with the actual use by vibrating a substance in which a semiconductor device and an electrostatic generation amount are clarified in a plastic case and using static electricity generated at that time. CONSTITUTION:When a semiconductor device 1 and a substance 5 in which electrostatic generation amount is clarified are contained in a plastic case 6 and vibrated, the device 1 and the substance 5 generate static electricity by the friction between them and the case 6. Then, the presence of the defect of the device 1 is examined. Since the static electricity can be obtained in the tube by using the different substance which generates static electricity amount, the electrostatic breakdown strength test of the device can be quantitatively performed by comparing the presence of the defect of the device 1. With the substances 5 alternately disposed on the device 1, uniform application of the static electricity to the device 1 is realized.
申请公布号 JPS60145636(A) 申请公布日期 1985.08.01
申请号 JP19840002959 申请日期 1984.01.09
申请人 MITSUBISHI DENKI KK 发明人 SATOU YOSHIHIRO;MATSUMOTO HEIHACHI;MIYAMOTO KAZUTOSHI
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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