| 摘要 |
PURPOSE:To obtain a pattern forming method of the case that a semiconductor integrated circuit device having ultrafine element size of submicron is formed by projecting the first light patterned on a substrate, simultaneously interfering the incidents of the secone light capable of interfering with the first light to microminiaturize the projected image. CONSTITUTION:A figure is formed on a leticle 1, projected by coherent light 6, and contracted by a lens system 2, thereby obtaining an image on a wafer 3. The second coherent light 7 emitted from the same light source as the light 6 does not pass the leticle 1, but is led by another system, and projected on the wafer 3 through the optical system of mirror 4 and a lens 5. The lights 6, 7 projected on the wafer 3 form the dense and pale interfering fringe pattern 8 on the front surface of the water 3, and photosensitizes the photosensitive film coated on the front surface of the wafer 3. The light 6 projected through the leticles 1 is partly interrupted by the leticle 1. Thus, the interfering pattern generated by the lights 6, 7 is partly obtained. |
